Ultra-low power 90nm 6T SRAM cell for wireless sensor network applications

TitleUltra-low power 90nm 6T SRAM cell for wireless sensor network applications
Publication TypeConference Paper
Year of Publication2006
AuthorsHo, D., K. Iniewski, S. Kasnavi, A. Ivanov, and S. Natarajan
Conference NameCircuits and Systems, 2006. ISCAS 2006. Proceedings. 2006 IEEE International Symposium on
Pagination4 pp.
Keywords4 kByte, 90 nm, integrated circuit design, leakage reduction, low-power electronics, SRAM chips, ultra-low power SRAM cell, wireless sensor network, wireless sensor networks
Abstract

This paper presents a comparative study of leakage reduction techniques applied to a 90 nm 6T SRAM to find an optimal design for ultra-low power wireless sensor applications. A 4-Kb SRAM implemented with the proposed techniques has a leakage as low as 26.5 nA in the idle mode, a 189times improvement over a memory without applying such techniques
URLhttp://dx.doi.org/10.1109/ISCAS.2006.1693538
DOI10.1109/ISCAS.2006.1693538

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